Polycrystalline silicon
OverviewDeposition methodsComparison to monocrystalline siliconComponentsUpgraded metallurgical-grade siliconPotential applicationsNovel ideasManufacturers
Polysilicon deposition, or the process of depositing a layer of polycrystalline silicon on a semiconductor wafer, is achieved by the chemical decomposition of silane (SiH4) at high temperatures of 580 to 650 °C. This pyrolysis process releases hydrogen. SiH 4(g) → Si(s) + 2 H 2(g) CVD at 500-800°C Polysilicon layers can be deposited using 100% silane at a pressure of 25–130 Pa (0